Electric dipole mechanism of the generation of electromagnetic radiation due to the spin transport in an InSb semiconductor / Viglin N. A.,Ustinov V. V.,Tsvelikhovskaya V. M.,Denisov O. F. // JETP LETTERS. - 2006. - V. 84, l. 2. - P. 79-83.

ISSN/EISSN:

0021-3640 / нет данных

Type:

Article

Abstract:

Conditions for the generation of electromagnetic radiation by spin-polarized electron transport through a junction made on the basis of an InSb semiconductor and an HgCr2Se4 or CO2MnSb ferromagnetic material are investigated. It is shown that electromagnetic radiation from the junction appears only when the electron flow passing from the ferromagnet to the InSb semiconductor is polarized. The radiation intensity is found to depend on the direction of the external magnetic field with respect to the InSb crystal axes. Maximum intensity values are observed for the field directions corresponding to the highest probability of electric dipole spin transitions between Zeeman levels.

Author keywords:

FERROMAGNETIC SEMICONDUCTOR; RESONANCE; MILLIMETER; EUO

DOI:

10.1134/S0021364006140086

Web of Science ID:

ISI:000241171900008

Соавторы в МНС:

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Другие поля

Поле	Значение
Month	JUL 25
Publisher	MAIK NAUKA/INTERPERIODICA/SPRINGER
Address	233 SPRING ST, NEW YORK, NY 10013-1578 USA
Language	English
Keywords-Plus	FERROMAGNETIC SEMICONDUCTOR; RESONANCE; MILLIMETER; EUO
Research-Areas	Physics
Web-of-Science-Categories	Physics, Multidisciplinary
Author-Email	viglin@inip.uran.ru
ResearcherID-Numbers	Ustinov, Vladimir/G-7501-2011 Viglin, Nick/J-6791-2013
ORCID-Numbers	Ustinov, Vladimir/0000-0002-5155-7947 Viglin, Nick/0000-0002-9103-7241
Number-of-Cited-References	17
Usage-Count-Last-180-days	1
Usage-Count-Since-2013	7
Journal-ISO	Jetp Lett.
Doc-Delivery-Number	093MH