Diffusion-barrier contacts based on the TiN and Ti(Zr)B-x interstitial phases in the microwave diodes for the range of 75-350 GHz / Boltovets NS,Ivanov VN,Belyaev AE,Konakova RV,Kudrik YY,Milenin VV,Arsent'ev IN,Bobyl AV,Brunkov PN,Tarasov IS,Tonkikh AA,Ulin VP,Ustinov VV,Cirlin GE // SEMICONDUCTORS. - 2006. - V. 40, l. 6. - P. 734-738.

ISSN/EISSN:

1063-7826 / нет данных

Type:

Article

Abstract:

A new technology for thermally stable ohmic contacts with diffusion barriers based on the amorphous TiN and Ti(Zr)B-x interstitial phases is used in the development of microwave diodes for the millimeter region ( with the frequency higher than 100 GHz) based on GaAs, InP, and Si. It became possible to increase the reliability of the GaAs- and InP-based Gunn diodes that operate at the frequency of 200 GHz by using the epitaxial layers formed on porous III-V substrates by gas-phase, molecular-beam, and liquid-phase epitaxy as the initial device structures. The range of emission from the avalanche transit-time diodes based on Si is extended to 350 GHz. To this end, the technology of forming the active element on the silicon metallized diaphragm is used for the first time.

Author keywords:

POROUS GAAS; LAYERS

DOI:

10.1134/S1063782606060200

Web of Science ID:

ISI:000237971400020

Соавторы в МНС:

—

Другие поля

Поле	Значение
Month	JUN
Publisher	MAIK NAUKA/INTERPERIODICA/SPRINGER
Address	233 SPRING ST, NEW YORK, NY 10013-1578 USA
Language	English
Keywords-Plus	POROUS GAAS; LAYERS
Research-Areas	Physics
Web-of-Science-Categories	Physics, Condensed Matter
Author-Email	bms@isp.kiev.ua konakova@isp.kiev.ua bobyl@theory.ioffe.ru
ResearcherID-Numbers	Cirlin, George/G-6302-2016 Tonkikh, Alexander/C-7525-2011 Tarasov, Ilya/A-8343-2014 Arsentyev, Ivan/C-8480-2014 Bobyl, Alexander/A-3529-2014 Brunkov, Pavel Nikolaevich/A-6883-2014
ORCID-Numbers	Cirlin, George/0000-0003-0476-3630 Bobyl, Alexander/0000-0002-0185-7925 Brunkov, Pavel Nikolaevich/0000-0002-3400-4654
Number-of-Cited-References	29
Usage-Count-Since-2013	1
Journal-ISO	Semiconductors
Doc-Delivery-Number	048UG