Spin transistor in the EuO:Fe/GaAs contact / Bamburov V. G.,Borukhovich A. S.,Igant'eva N. I. // DOKLADY PHYSICS. - 2011. - V. 56, l. 3. - P. 141-144.

ISSN/EISSN:

1028-3358 / нет данных

Type:

Article

Abstract:

Spin-wave structures with magnetic-field-driven current-voltage characteristics at room temperature were produced using a spintronic europium-monoxide-based thin-film emitter and a single-crystal n-GaAs semiconductor collector. This manifests practical implementation of the spin current transport and creation of a high-temperature spin transistor with the magnetic semiconductor/nonmagnetic semiconductor contact.

Author keywords:

SPINTRONICS

DOI:

10.1134/S1028335811030062

Web of Science ID:

ISI:000289209900001

Соавторы в МНС:

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Другие поля

Поле	Значение
Month	MAR
Publisher	MAIK NAUKA/INTERPERIODICA/SPRINGER
Address	233 SPRING ST, NEW YORK, NY 10013-1578 USA
Language	English
Keywords-Plus	SPINTRONICS
Research-Areas	Mechanics; Physics
Web-of-Science-Categories	Mechanics; Physics, Multidisciplinary
Author-Email	A.S.Bor@rsvpu.ru
ResearcherID-Numbers	Bamburov, Vitaliy/J-3241-2017
Number-of-Cited-References	15
Usage-Count-Since-2013	4
Journal-ISO	Dokl. Phys.
Doc-Delivery-Number	745ZJ