Electronic properties of Al, Si-containing solid solutions based on B1-TiN, TiC determined by LMTO band structure calculations / Ivanovsky AL,Medvedeva NI,Shveikin GP,Zhukovosky VM // PHYSICA STATUS SOLIDI B-BASIC RESEARCH. - 1996. - V. 195, l. 1. - P. 195-208.

ISSN/EISSN:

0370-1972 / нет данных

Type:

Article

Abstract:

The results of nonempirical self-consistent band structure LMTO calculations of the electronic properties of B1-like solid solutions in Ti-Al-N-C and Ti-Si-N-C systems are given. The regularities of changing the electronic and energy parameters of solid solutions as a function of their composition are discussed. Direct computer modelling of the influence of the possible mechanisms of solid solution formations (according to Al, Si --> C, N or Al, Si --> Ti substitution types) on their band structure is carried out. The effect of oxygen impurities and nitrogen lattice vacancies on the electronic properties of the considered solid solutions is discussed taking Ti silicidonitride as an example. The results obtained are compared with recent XPS investigations of metastable B1-TiSxNy (O) films.

Author keywords:

TITANIUM; NITRIDES; COATINGS; CARBIDES; VANADIUM; ALLOYS; FILMS; (TI

DOI:

10.1002/pssb.2221950122

Web of Science ID:

ISI:A1996UM21000021

Соавторы в МНС:

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Другие поля

Поле	Значение
Month	MAY
Publisher	AKADEMIE VERLAG GMBH
Address	MUHLENSTRASSE 33-34, D-13187 BERLIN, GERMANY
Language	English
Keywords-Plus	TITANIUM; NITRIDES; COATINGS; CARBIDES; VANADIUM; ALLOYS; FILMS; (TI
Research-Areas	Physics
Web-of-Science-Categories	Physics, Condensed Matter
Number-of-Cited-References	24
Usage-Count-Since-2013	1
Journal-ISO	Phys. Status Solidi B-Basic Res.
Doc-Delivery-Number	UM210