Molecular-dynamic simulation of the isomerization and melting processes of Sin nanoclusters / Polukhin V.A., Potemkina E.V. // Rasplavy. - 2001. - V. , l. 6. - P. 62-80.

ISSN:

02350106

Type:

Article

Abstract:

A problem of effective alloying (implantation, atom and cluster assembling) for preparation of metastable materials with the high concentration of energy-active centers of own defects and implanted impurities in semiconductors is considered. The complex analysis of the basic mechanisms of structure forming in the bulky materials is made on the basis of results of computer simulation. The mutual dependence of structure and cooperative dynamics of atoms, forming Si nanoclusters, is studied. The data on the mutual dependence make it possible a control of thermal properties, phase changes, isomerization, surface geometry of nanoclusters.

Author keywords:

Index keywords:

Alloying; Computer simulation; Isomerization; Melting; Molecular dynamics; Phase transitions; Semiconducting silicon; Silicon; Thermodynamic stability; Clusters; Nanostructured materials

DOI:

нет данных

Смотреть в Scopus:

https://www.scopus.com/inward/record.uri?eid=2-s2.0-0035549549&partnerID=40&md5=5dc0fff5940ebb5fc8f1fd119528dc51

Соавторы в МНС:

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Другие поля

Поле	Значение
Link	https://www.scopus.com/inward/record.uri?eid=2-s2.0-0035549549&partnerID=40&md5=5dc0fff5940ebb5fc8f1fd119528dc51
Affiliations	Inst. Metallurgii, UrO, RAN, Ekaterinburg, Russian Federation
Correspondence Address	Polukhin, V.A.; Inst. Metallurgii, UrO, RAN, Ekaterinburg, Russian Federation
CODEN	RASPE
Language of Original Document	Russian
Abbreviated Source Title	Rasplavy
Source	Scopus