How to extract information about domain kinetics in thin ferroelectric films from switching transient current data / Shur V.Y., Rumyantsev E.L., Makarov S.D., Volegov V.V. // Integrated Ferroelectrics. - 1994. - V. 5, l. 4. - P. 293-301.

ISSN:
10584587
Type:
Article
Abstract:
The paper presents the new method of mathematical treatment which allows to extract essential information about domain kinetics in polycrystal films from the traditional measurements of switching current. This information can not be obtained within the commonly used treatment. The method was verified by computer simulation and direct experiments in model single crystals. © 1994, Taylor & Francis Group, LLC
Author keywords:
computer simulation; domain structure; ferroelectric thin films; phase rrrinsformations; switching current
Index keywords:
нет данных
DOI:
10.1080/10584589408223886
Смотреть в Scopus:
https://www.scopus.com/inward/record.uri?eid=2-s2.0-0004988355&doi=10.1080%2f10584589408223886&partnerID=40&md5=3a8f26f674120df6755ec054c1de0301
Соавторы в МНС:
Другие поля
Поле Значение
Link https://www.scopus.com/inward/record.uri?eid=2-s2.0-0004988355&doi=10.1080%2f10584589408223886&partnerID=40&md5=3a8f26f674120df6755ec054c1de0301
Affiliations Institute of Physics and Applied Mathematics, Ural State University, Lenin ave. 51, 620083 Ekaterinburg, Russian Federation
Author Keywords computer simulation; domain structure; ferroelectric thin films; phase rrrinsformations; switching current
References Shur, V.Y., Rumyantsev, E.L., Ferroelectrics, , (in press); Fatuzzo, E., Merz, W.J., (1967) Ferroelectricity, p. 201. , (North-Holland Publishing Company, Amsterdam; Shur, V.Y., Gruverman, A.L., Ponomarev, N.Y., Rumyantsev, E.L., Tonkachyova, N.A., (1991) JETP Lett., 53, p. 615; Shur, V.Y., Gruverman, A.L., Ponomarev, N.Y., Rumyantsev, E.L., Tonkachyova, N.A., (1992) Integrated Ferroelectrics, 2, p. 51; Fatuzzo, E., (1962) Phys. Rev., 127, p. 1999; Wieder, H.H., (1960) J. Appl. Phys., 31, p. 180; Kolmogorov, A.N., (1937) Izv. Acad. Nauk USSR, Ser. Math., 3, p. 355; Avrami, M., (1939) J. Chem. Phys., 7, p. 1103. , 8, 212 (1940, 9, 17 (1941); Ishibashi, Y., Takagi, Y., (1971) J. Phys. Soc. Jap., 31, p. 506; Duiker, H.M., Beale, P.D., (1990) Phys. Rev. B, 41, p. 490; Ishibashi, Y., Orihara, H., (1992) J. Phys. Soc. Jap., 61, p. 1919. , 61, 4650 (1992); Dimmler, K., Parris, M., Butler, D., Eaton, S., Pouligny, B., Scott, J.F., Ishibashi, Y., (1985) J. Appl. Phys., 61, p. 5467; Scott, J.F., Kammerdiner, L., Parris, M., Traynor, S., Ottenbacher, V., Shewabkeh, A., Oliver, W.F., (1988) J. Appl. Phys., 64, p. 787; Huffman, M., Zhu, J., Al-Jassim, M.M., (1993) Ferroelectrics, 140, p. 191; Klee, M., Machens, U., De Veirman, A., (1993) Ferroelectrics, 140, p. 211; Shur, V.Y., Gruverman, A.L., Letuchev, V.V., Rumvantsev, E.L., Subbotin, A.L., (1989) Ferroelectrics, 98, p. 29
Language of Original Document English
Abbreviated Source Title Integr Ferroelectr
Source Scopus