Intrinsic and defect related luminescence in double oxide films of Al-Hf-O system under soft X-ray and VUV excitation / Pustovarov V. A.,Smirnova T. P.,Lebedev M. S.,Gritsenko V. A.,Kirm M. // JOURNAL OF LUMINESCENCE. - 2016. - V. 170, l. 1. - P. 161-167.

ISSN/EISSN:

0022-2313 / 1872-7883

Type:

Article

Abstract:

Low temperature time-resolved luminescence spectra in the region of 2.5-9.5 eV under soft X-ray excitation as well as time-resolved luminescence excitation spectra in the UV-VUV region (3.7-12 eV) of solid solutions Al(x)Ff(y)O(1-x-y) thin films were investigated. The values of x and Al/Hf ratio were determined from X-ray photoelectron srectroscopy data. Hafnia films and films mixed with alumina were grown in a flow-type chemical vapor deposition reactor with argon as a carrier gas. In addition, pure alumina films were prepared by the atomic layer deposition method. A strong emission band with the peak position at 4.4 eV and with the decay time in the is-range was revealed for pure hafnia films. The emission peak at 7.74 eV with short nanosecond decay kinetics was observed in the luminescence spectra for pure alumina films. These emission bands were ascribed to the radiative decay of self-trapped excitons (an intrinsic luminescence) in pure HfO2 and Al2O3 films, respectively. Along with intrinsic host emission, defect related luminescence bands with a larger Stokes shift were observed. In the emission spectra of the solid solution films (x=4; 17; 20 at\%) the intrinsic emission bands are quenched and only the luminescence of defects (an anion vacancies) was observed. Based on transformation of the luminescence spectra and ns-luminescence decay kinetics, as well as changes in the time-resolved luminescence and luminescence excitation spectra, the relaxation processes in the films of solid solution are discussed. (C) 2015 Elsevier B.V. All rights reserved.

Author keywords:

Time-resolved luminescence; Thin films; Hafnia; Alumina; Self-trapped exciton; Defects ELECTRONIC EXCITATIONS; OPTICAL-PROPERTIES; THIN-FILMS; AL2O3; DIELECTRICS; RADIATION; SPECTROSCOPY; CRYSTALS; CORUNDUM; HAFNIUM

DOI:

10.1016/j.jlumin.2015.10.053

Web of Science ID:

ISI:000365606600023

Соавторы в МНС:

—

Другие поля

Поле	Значение
Month	FEB
Publisher	ELSEVIER SCIENCE BV
Address	PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
Language	English
EISSN	1872-7883
Keywords-Plus	ELECTRONIC EXCITATIONS; OPTICAL-PROPERTIES; THIN-FILMS; AL2O3; DIELECTRICS; RADIATION; SPECTROSCOPY; CRYSTALS; CORUNDUM; HAFNIUM
Research-Areas	Optics
Web-of-Science-Categories	Optics
Author-Email	vpustovarov@bk.ru
ResearcherID-Numbers	Kirm, Marco/M-1533-2016
ORCID-Numbers	Kirm, Marco/0000-0002-1833-6894 Lebedev, Mikhail/0000-0002-6455-1640
Funding-Acknowledgement	Russian Science Foundation {[}14-19-00192]; Center of Excellence ``Radiation and Nuclear Technologies{''} (Competitiveness Enhancement Program of Ural Federal University, Russia); HASYLAB DESY {[}20110843, 20080119EC]; Estonian Materials Technology Program {[}3.2.1101.12-0014]; Estonian Ministry of Education and Research {[}IUT 2-26]
Funding-Text	This work was partly supported by the Russian Science Foundation (Grant no. 14-19-00192), the Center of Excellence ``Radiation and Nuclear Technologies{''} (Competitiveness Enhancement Program of Ural Federal University, Russia), HASYLAB DESY (Projects nos. 20110843, 20080119EC), Estonian Materials Technology Program (Project 3.2.1101.12-0014) and institutional research funding (IUT 2-26) of the Estonian Ministry of Education and Research.
Number-of-Cited-References	34
Usage-Count-Last-180-days	2
Usage-Count-Since-2013	20
Journal-ISO	J. Lumines.
Doc-Delivery-Number	CX3NU