The effect of a surface potential on spin-dependent tunnelling in metal-insulator narrow-gap semiconductor structures in a magnetic field / Minkov GM,Rut OE,Germanenko AV // SEMICONDUCTOR SCIENCE AND TECHNOLOGY. - 1997. - V. 12, l. 7. - P. 867-874.

ISSN/EISSN:

0268-1242 / нет данных

Type:

Article

Abstract:

We present results of tunnelling studies of p-Hg1-xCdxTe-oxide-Al structures with 0.165 < x < 0.2 in a magnetic field up to 6 T. The tunnelling conductivity oscillations resulting from the Landau quantization of the energy spectrum in the semiconductor volume are investigated. Under an in-plane magnetic field the amplitudes of tunnelling conductivity maxima connected with the tunnelling into a and b spin sublevels are found to differ substantially from one another, and the amplitude ratio varies from structure to structure. To understand the cause of this behaviour, the tunnelling conductivity for this magnetic field orientation is calculated taking into consideration the multi-band energy spectrum. It is shown that the contributions of the different spin sublevels to the tunnelling conductivity are dissimilar and the relationship between them depends strongly on the value of surface potential.

Author keywords:

TUNNELING SPECTROSCOPY; QUANTUM-WELL; GAPLESS SEMICONDUCTOR; LANDAU-LEVELS; SYSTEMS

DOI:

10.1088/0268-1242/12/7/017

Web of Science ID:

ISI:A1997XK93500015

Соавторы в МНС:

Другие поля

Поле	Значение
Month	JUL
Publisher	IOP PUBLISHING LTD
Address	DIRAC HOUSE, TEMPLE BACK, BRISTOL, ENGLAND BS1 6BE
Language	English
Keywords-Plus	TUNNELING SPECTROSCOPY; QUANTUM-WELL; GAPLESS SEMICONDUCTOR; LANDAU-LEVELS; SYSTEMS
Research-Areas	Engineering; Materials Science; Physics
Web-of-Science-Categories	Engineering, Electrical \& Electronic; Materials Science, Multidisciplinary; Physics, Condensed Matter
ResearcherID-Numbers	Minkov, Grigory/K-3855-2013
ORCID-Numbers	Minkov, Grigory/0000-0001-8090-5309
Number-of-Cited-References	21
Journal-ISO	Semicond. Sci. Technol.
Doc-Delivery-Number	XK935