THE CONDUCTIVITY ANISOTROPY IN UNIAXIALLY STRESSED P-INSB / GERMANENKO AV,MINKOV GM,RUT OE // PHYSICA STATUS SOLIDI B-BASIC RESEARCH. - 1992. - V. 171, l. 1. - P. 159-165.

ISSN/EISSN:

0370-1972 / нет данных

Type:

Article

Abstract:

The conductivity anisotropy induced by uniaxial stress in p-InSb with acceptor concentration N(A) almost-equal-to (10(14) to 2 x 10(16) cm-3 is investigated in the temperature range T = 2 to 70 K under uniaxial stress up to 6 x 10(8) Pa. In pure materials pressure and temperature dependences of the conductivity anisotropy are explained by ordinary models in the hopping regime and regime of free hole conductivity. In doped semiconductors these dependences cannot be explained without taking into account the peculiarities of the metal-dielectric transition induced by uniaxial stress in p-type narrow-gap semiconductors with degenerate valence band GAMMA-8.

Author keywords:

нет данных

DOI:

10.1002/pssb.2221710117

Web of Science ID:

ISI:A1992HW10900016

Соавторы в МНС:

Другие поля

Поле	Значение
Month	MAY
Publisher	AKADEMIE VERLAG GMBH
Address	MUHLENSTRASSE 33-34, D-13187 BERLIN, GERMANY
Language	English
Research-Areas	Physics
Web-of-Science-Categories	Physics, Condensed Matter
ResearcherID-Numbers	Minkov, Grigory/K-3855-2013
ORCID-Numbers	Minkov, Grigory/0000-0001-8090-5309
Number-of-Cited-References	9
Usage-Count-Since-2013	1
Journal-ISO	Phys. Status Solidi B-Basic Res.
Doc-Delivery-Number	HW109