Simulating equilibrium processes in the Ga(NO3)(3)-H2O-NaOH system / Fedorova E. A.,Bakhteev S. A.,Maskaeva L. N.,Yusupov R. A.,Markov V. F. // RUSSIAN JOURNAL OF PHYSICAL CHEMISTRY A. - 2016. - V. 90, l. 6. - P. 1274-1279.

ISSN/EISSN:

0036-0244 / 1531-863X

Type:

Article

Abstract:

Equilibrium processes in the Ga(NO3)(3)-H2O-NaOH system are simulated with allowance for the formation of precipitates of various compositions using experimental data from potentiometric titration and theoretical studies. The values of the instability constants are calculated along with the stoichiometric compositions of the resulting compounds. It is found that pH ranges of 1.0 to 4.3 and 12.0 to 14.0 are best for the deposition of gallium chalcogenide films.

Author keywords:

gallium(III) selenide; complexation; hydrolysis; rate of formation; potentiometric titration; mathematical modeling; equilibrium processes; thin films GA2SE3; DEPOSITION; GA2TE3; FILMS

DOI:

10.1134/S0036024416060078

Web of Science ID:

ISI:000376605500029

Соавторы в МНС:

Другие поля

Поле	Значение
Month	JUN
Publisher	MAIK NAUKA/INTERPERIODICA/SPRINGER
Address	233 SPRING ST, NEW YORK, NY 10013-1578 USA
Language	English
EISSN	1531-863X
Keywords-Plus	GA2SE3; DEPOSITION; GA2TE3; FILMS
Research-Areas	Chemistry
Web-of-Science-Categories	Chemistry, Physical
Author-Email	ka\_fed-ra@mail.ru
Funding-Acknowledgement	Program 211 for the State Support of Leading Universities of the Russian Federation {[}02.A03.21.0006]; RF Ministry of Education and Science {[}4.1270.2014/K]
Funding-Text	This work was supported by Program 211 for the State Support of Leading Universities of the Russian Federation, contract no. 02.A03.21.0006 of August 27, 2013); and by the RF Ministry of Education and Science as part of State Task no. 4.1270.2014/K. It was performed as part Approved Task no. 4.1584.2014/K of the competitive part of the State Task for 2014-2016.
Number-of-Cited-References	18
Usage-Count-Since-2013	2
Journal-ISO	Russ. J. Phys. Chem. A
Doc-Delivery-Number	DM8IL