| Нет данных |
| SOVIET PHYSICS SEMICONDUCTORS-USSR |
— |
INFLUENCE OF UNIAXIAL DEFORMATION ON THE ENERGY-SPECTRUM AND GALAVANOMAGNETIC EFFECTS IN ZERO-GAP P-TYPE HGMNTE / GERMANENKO AV,MINKOV GM,RUMYANTSEV EL,RUT OE,GAVALESHKO NP,FRASUNYAK VM // SOVIET PHYSICS SEMICONDUCTORS-USSR. - 1989. - V. 23, l. 1. - P. 71-75.
|
1989 |
1 |
— |
| SOVIET PHYSICS SEMICONDUCTORS-USSR |
— |
TRANSPORT EFFECTS IN UNIAXIALLY DEFORMED P-TYPE HG1-XCDXTE WITH EG GREATER-THAN 0 / GERMANENKO AV,MINKOV GM,RUMYANTSEV EL,RUT OE,INISHEVA OV // SOVIET PHYSICS SEMICONDUCTORS-USSR. - 1989. - V. 23, l. 5. - P. 500-505.
|
1989 |
4 |
— |
| SOVIET PHYSICS SEMICONDUCTORS-USSR |
— |
UNIAXIALLY DEFORMED P-TYPE HGMNTE WITH EPSILON-G GREATER-THAN O - GALVANOMAGNETIC EFFECTS, ENERGY-SPECTRUM / GERMANENKO AV,MINKOV GM,RUMYANTSEV EL,RUT OE // SOVIET PHYSICS SEMICONDUCTORS-USSR. - 1989. - V. 23, l. 12. - P. 1355-1359.
|
1989 |
0 |
— |
| ZHURNAL EKSPERIMENTALNOI I TEORETICHESKOI FIZIKI |
— |
ENERGY-SPECTRUM AND GALVANOMAGNETIC PHENOMENA IN THE GAPLESS SEMICONDUCTOR P-HGCDTE SUBJECTED TO UNIAXIAL COMPRESSION / GERMANENKO AV,MINKOV GM,RUMYANTSEV EL,RUT OE // ZHURNAL EKSPERIMENTALNOI I TEORETICHESKOI FIZIKI. - 1988. - V. 94, l. 8. - P. 242-254.
|
1988 |
4 |
— |
| SOVIET PHYSICS SEMICONDUCTORS-USSR |
— |
MAGNETIC FREEZEOUT OF HOLES IN UNIAXIALLY DEFORMED P-TYPE INSB / GERMANENKO AV,MINKOV GM,RUMYANTSEV EL,RUT OE // SOVIET PHYSICS SEMICONDUCTORS-USSR. - 1988. - V. 22, l. 7. - P. 734-737.
|
1988 |
1 |
— |
| SOVIET PHYSICS SEMICONDUCTORS-USSR |
— |
PROBLEM OF GALVANOMAGNETIC EFFECTS IN LIGHTLY DOPED P-TYPE ZERO-GAP SEMICONDUCTOR HG1-XCDXTE / GERMANENKO AV,KRUZHAEV VV,MINKOV GM,RUT OE // SOVIET PHYSICS SEMICONDUCTORS-USSR. - 1988. - V. 22, l. 6. - P. 626-629.
|
1988 |
3 |
— |
| SOVIET PHYSICS SEMICONDUCTORS-USSR |
— |
ACCEPTOR ENERGY AND CHARACTERISTICS OF THE MOTT TRANSITION IN P-TYPE INSB SUBJECTED TO UNIAXIAL DEFORMATION / GERMANENKO AV,MINKOV GM,RUT OE // SOVIET PHYSICS SEMICONDUCTORS-USSR. - 1987. - V. 21, l. 11. - P. 1216-1220.
|
1987 |
9 |
— |
| SOVIET PHYSICS SEMICONDUCTORS-USSR |
— |
CHARACTERISTICS OF GALVANOMAGNETIC EFFECTS AND FREEZEOUT AT ACCEPTORS IN ZERO-GAP P-TYPE HG1-XMNXTE SUBJECTED TO A MAGNETIC-FIELD AT LOW-TEMPERATURES / GERMANENKO AV,ZVEREV LP,KRUZHAEV VV,MINKOV GM,RUT OE // SOVIET PHYSICS SEMICONDUCTORS-USSR. - 1986. - V. 20, l. 1. - P. 46-52.
|
1986 |
5 |
— |
| SOVIET PHYSICS SEMICONDUCTORS-USSR |
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INFLUENCE OF QUANTIZATION OF THE VALENCE BAND SPECTRUM ON THE MAGNETORESISTANCE OF P-TYPE HG1-XMNXTE AT LOW-TEMPERATURES / GERMANENKO AV,KRUZHAEV VV,MINKOV GM,RUT OE // SOVIET PHYSICS SEMICONDUCTORS-USSR. - 1986. - V. 20, l. 7. - P. 838-839.
|
1986 |
2 |
— |
| SOVIET PHYSICS SEMICONDUCTORS-USSR |
— |
INFLUENCE OF THE EXCHANGE INTERACTION ON GALVANOMAGNETIC EFFECTS IN HEAVILY DOPED P-TYPE HG1-XMNX TE WITH EPSILON-G GREATER-THAN 0 / GERMANENKO AV,KRUZHAEV VV,MINKOV GM,RUT OE // SOVIET PHYSICS SEMICONDUCTORS-USSR. - 1986. - V. 20, l. 9. - P. 1041-1044.
|
1986 |
1 |
— |