| Нет данных |
| PHYSICAL REVIEW B |
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Analysis of negative magnetoresistance: Statistics of closed paths. II. Experiment / Minkov GM,Negashev SA,Rut OE,Germanenko AV,Khrykin OI,Shashkin VI,Danil'tsev VM // PHYSICAL REVIEW B. - 2000. - V. 61, l. 19. - P. 13172-13176.
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2000 |
14 |
10.1103/PhysRevB.61.13172
(полный текст)
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| NANOTECHNOLOGY |
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Inter-well transitions and negative magnetoresistance in double-quantum-well heterostructures / Minkov GM,Germanenko AV,Rut OE,Khrykin OI,Shashkin VI,Danil'tsev VM // NANOTECHNOLOGY. - 2000. - V. 11, l. 4. - P. 406-410.
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2000 |
3 |
10.1088/0957-4484/11/4/343
(полный текст)
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| PHYSICAL REVIEW B |
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Low-field negative magnetoresistance in double-layer structures / Minkov GM,Germanenko AV,Rut OE,Khrykin OI,Shashkin VI,Danil'tsev VM // PHYSICAL REVIEW B. - 2000. - V. 62, l. 24. - P. 17089-17093.
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2000 |
7 |
10.1103/PhysRevB.62.17089
(полный текст)
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| PHYSICAL REVIEW B |
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Magnetic-field-dependent zero-bias diffusive anomaly in Pb oxide-n-InAs structures: Coexistence of two- and three-dimensional states / Minkov GM,Germanenko AV,Negachev SA,Rut OE,Sukhorukov EV // PHYSICAL REVIEW B. - 1999. - V. 59, l. 20. - P. 13139-13146.
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1999 |
3 |
10.1103/PhysRevB.59.13139
(полный текст)
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| SEMICONDUCTORS |
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New approach to the analysis of negative magnetostriction in two-dimensional structures / Min'kov GM,Negashev SA,Rut OE,Germanenko AV,Khrykin OI,Shashkin VI,Danil'tsev VM // SEMICONDUCTORS. - 1999. - V. 33, l. 8. - P. 898-900.
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1999 |
0 |
10.1134/1.1187920
(полный текст)
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| PHYSICA B-CONDENSED MATTER |
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Magnetic field dependent zero-bias diffusive anomaly in Pb-oxide-n-InAS structures: Coexistence of 2D and 3D states / Minkov GM,Germanenko AV,Negachev SA,Rut OE,Sukhorukov EV // PHYSICA B-CONDENSED MATTER. - 1998. - V. 256, l. . - P. 523-526.
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1998 |
0 |
10.1016/S0921-4526(98)00554-7
(полный текст)
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| SEMICONDUCTORS |
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Many-body effects and electron tunneling in metal-insulator-p-type semiconductor structures / Min'kov GM,Germanenko AV,Rut OE // SEMICONDUCTORS. - 1998. - V. 32, l. 9. - P. 957-959.
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1998 |
0 |
10.1134/1.1187523
(полный текст)
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| SEMICONDUCTORS |
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Weak localization and intersubband transitions in delta-doped GaAs / Min'kov GM,Negashev SA,Rut OE,Germanenko AV,Valyaev VV,Gurtovoi VL // SEMICONDUCTORS. - 1998. - V. 32, l. 12. - P. 1299-1303.
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1998 |
4 |
10.1134/1.1187618
(полный текст)
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| PHYSICAL REVIEW B |
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Interband mixing between two-dimensional states localized in a surface quantum well and heavy-hole states of the valence band in a narrow-gap semiconductor / Larionova VA,Germanenko AV // PHYSICAL REVIEW B. - 1997. - V. 55, l. 19. - P. 13062-13065.
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1997 |
10 |
10.1103/PhysRevB.55.13062
(полный текст)
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| SEMICONDUCTOR SCIENCE AND TECHNOLOGY |
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The effect of a surface potential on spin-dependent tunnelling in metal-insulator narrow-gap semiconductor structures in a magnetic field / Minkov GM,Rut OE,Germanenko AV // SEMICONDUCTOR SCIENCE AND TECHNOLOGY. - 1997. - V. 12, l. 7. - P. 867-874.
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1997 |
0 |
10.1088/0268-1242/12/7/017
(полный текст)
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